Abstract
Abstract Crystallographic fatigue crack growth has been studied using iron–silicon single crystals having a notch plane of (1 1 0) or (1 1 2). In crystals containing a notch direction within an angle of ∼35° to [0 0 1] on a notch plane of (1 1 0), a crack grows by the separation of slip planes on the basis of evenly operated alternating shear on the intersecting slip systems at the crack tip. These crystals exhibit considerably high resistances to fatigue crack growth. In a crystal with a notch direction rotated at an angle of ∼55° to [0 0 1] on (1 1 0), two competing mechanisms, i.e. cleavage-like cracking related to the generation of sessile dislocations and saw-toothed feature formation due to the activation of multiple slip systems, appeared instead of an alternating shear mechanism. When alternating shear occurs unevenly on asymmetrically arranged slip planes, the fatigue crack growth resistance is low as compared to that in the case in which it occurs evenly.
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