Crystallographic Orientations of MgO Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition

Abstract

Thin films of magnesium oxide (MgO) were prepared on glass substrates by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD) and the relationship between deposition conditions and crystallographic orientations were studied. Highly crystalline and highly (100)-oriented MgO film was obtained at the vaporizing temperature of 210° C, O2 flow rate of 200 cm3· min-1, rf power of 400 W and substrate temperature of 400° C. The orientation of MgO films is changed from (100) to (110) upon increasing the vaporizing temperature from 210 to 240° C or upon decreasing the O2 flow rate from 200 to 50 cm3· min-1. These results indicated that the films deposited at the high arrival ratios of oxygen to magnesium precursor (O/Mg) onto the substrate had a (100) orientation, while those deposited at the low arrival ratios of O/Mg had a (110) orientation. The intrinsic stress of the (100) oriented film was tensile and the magnitude was 0.25 GPa.