Abstract
SBT and SBTN thin film capacitors on Pt/Ti/SiO2/Si have been fabricated from photosensitive MOD solutions with the composition Sr0.8Bi2.35Ta2−xNbx (x=0.0−0.8). Films prepared by a conventional spin-on and anneal process are essentially randomly oriented, while films that received UV radiation before annealing exhibit c-axis orientation. The degree of c-axis orientation is enhanced by short pyrolysis times. Ferroelectric properties were characterized by hysteresis and pulse measurements. A higher Qsw and lower V(90%) were measured for films with random orientation in comparison with films having the same composition but c-axis preferred oriented. The c-axis orientation can be controlled by substrate pre-annealing. UV irradiated SBT and SBTN films with random orientation can be prepared on the substrates that are pre-annealed at 650°C.
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