Abstract
AbstractMo films deposited on glass substrates by rf sputtering, and Cu(InGa)Se2 (CIGS) films deposited on the Mo films by the three‐stage method and CuGaSe2 (CGS) films deposited directly on glass substrates by co‐evaporation of elemental source materials were observed by X‐ray diffraction (XRD) pole figure measurements. The texture analysis of the Mo films revealed a wide variety of solid‐spatial orientations, being dependent on the sputtering device configuration and deposition conditions. The in‐plane orientation of the CIGS or CGS films was affected by the Mo film texture, however, the predominant crystallographic lattice plane along the substrate surface was found to be close to (115) in any case. It must be noticed that the CIGS film is apt to grow in (115) orientation because of the lattice plane nature although this orientation cannot be detected by the XRD 2θ –θ scan due to its zero structural factor. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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