Abstract
In this work, the controlled synthesis of Cd0.9Zn0.1S, Cd0.89Zn0.1Cu0.01S and Cd0.87Zn0.1Cu0.03S nanostructures by chemical co-precipitation technique was reported. The XRD investigation confirmed the cubic structure on Zn/Cu-doped CdS without any secondary/impurity related phases. No modification in cubic structure was detected during the addition of Zn/Cu into CdS. The reduction of crystallite size from 63 to 40 Å and the changes in lattice parameter confirmed the incorporation of Cu into Cd0.9Zn0.1S and also the generation of Cu related defects. The shift of absorption edge along upper wavelength region and elevated absorption intensity by Cu doping can be accredited to the collective consequence of quantization and the generation of defect associated states. The enhanced optical absorbance and the reduced energy gap recommended that Cd0.87Zn0.1Cu0.03S nanostructure is useful to enhance the efficiency of opto-electronic devices. The presence of Cd–S/Zn–Cd–S /Zn/Cu–Cd–S chemical bonding were confirmed by Fourier transform infrared investigation. The elevated green emission by Cu incorporation was explained by decrease of crystallite size and creation of more defects. Zn, Cu dual doped CdS nanostructures are recognized as the possible and also efficient photo-catalyst for the removal dyes like methylene blue. The enhanced photo-catalytic behavior of Zn, Cu dual doped CdS is the collective consequences of high density electron–hole pairs creation, enhanced absorbance in the visible wavelength, surface area enhancement, reduced energy gap and the formation of novel defect associated states. The stability measurement signified that Cu doped Cd0.9Zn0.1S exhibits superior dye removal ability and better stability even after 6 repetitive runs with limited photo-corrosion due to more charge carriers liberation, increased surface to volume ratio and creation of more defects.
Highlights
Semiconducting nanostructured materials play an important role in the latest research technology [1]
No modification in cubic structure was detected during the addition of Zn/Cu into cadmium sulfide (CdS)
The reduction of crystallite size from 63 Å to 40 Å and the changes in lattice parameter confirmed the incorporation of Cu into Cd0.9Zn0.1S and generation of Cu related defects
Summary
Semiconducting nanostructured materials play an important role in the latest research technology [1]. The doping of transition metals (TMs) introduces the different deep levels inside the energy gap which can adjust the optical nature of the materials and modify the electro-chemical and electrical characteristics and induces various practical applications in different modern fields of technology [26]. Within the different doping elements, Zn is considered as the first dopant to alter the size, optical, electrical, magnetic structural, photoluminescence and photo-catalytic characteristics of CdS lattice by replacing Cd2+ ions and to create Cd-Zn-S nanostructures [34]. Due to the enhanced energy gap and reduced crystallite size by Zn incorporation in CdS improves the photo-catalytic behaviour of Zn-CdS composite material with better photo-catalytic stability and higher surface to volume ratio [37] which is crucial to generate the new and novel materials. The structural, FTIR, optical, photoluminescence and photo-catalytic assessments on Zn-doped CdS and Zn, Cu dual doped CdS nanostructures were thoroughly explored and the attained outcomes are interpreted
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