Crystallographic characterization of sputter-deposited epitaxial Nb-Cu-Co and Nb-Cu-Permalloy multilayers using electron back-scatter diffraction patterns

Abstract

Abstract Epitaxial Nb-Cu-Co and Nb-Cu-Permalloy™ (Py) multilayers have been grown on (1120) sapphire substrates by sputter deposition. Electron backscatter diffraction patterns (EBSPs) have been used to characterize individual layers. while atomic force microscopy was used for studying the surface topography. EBSPs have been demonstrated to be a viable technique for characterization of these thin sputtered films. EBSP results have shown that the Nb films grow as high quality epitaxial single crystals with (110)bcc orientations. Cu films grown on the epitaxial Nb display two in-plane epitaxial variants corresponding to two stacking sequences of {111}fcc planes. These Cu variants take up the Nishiyama-Wasserman orientation relationship with the underlying Nb. Subsequent sputtering of Co or Py on the epitaxial Cu films results in the growth of two variants of 111fcc layers. Orientation maps of the Cu, Co and Py films, which illustrate the size and distribution of the growth variants, are presented.