Abstract
In this study, we investigate the grain size effect of high electron mobility transistor devices with ohmic contact metals of stacked Ti/Al/Ni/Au and Ti/Al/Mo/Au. In addition to a comparison of electrical characteristics, the ohmic contacts were also examined by a scratch test for the observation of adhesion behavior. The experimental results demonstrate that the metal grain size is strongly dependent on metal adhesion, which may lead to bonding issues. Moreover, the grain-induced lateral stress lowers the drive current and increases the off-state current owing to the degraded gate swing and transconductance of transistor switching characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
