Abstract
The crystallization mechanism of hydrogenated amorphous silicon (a-Si:H)has been studied through the real time monitoring of the surface temeparture, transmittance and reflectance (T/R) profiles during the plasma annealing utilizing an rf thermal plasma torch. The correlation among the surface temperature profile, T/R, and film fine structure is discussed. The film crystallization proceeds through the solid phase crystallization followed with the grain growth due to the coalescence of small crystalline grains.
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