Crystallization of Thin Copper Films on Silica Substrate for Graphene Growth

Abstract

The synthesis of graphene on thin copper film deposited on quartz substrate is reported. The copper films are fabricated with different thickness of 300 and 1150 nm and then crystallized during thermal annealing that occurs at temperature of 950 and 1000 °C for 30 or 90 min. The size of copper grains increases with increasing of the temperature and the time of annealing that results in increasing of graphene film size. The deposited copper films are studied by electron backscatter diffraction and synthesized graphene films are analyzed by Raman spectroscopy and scanning probe microscopy. Proposed phase contrast mode of the scanning probe microscopy demonstrates high lateral resolution and sensitivity to the presence of graphene with different number of layers. It is found that graphene monolayer is preferably formed on the surface of copper grains with orientation {111} and proposed techniques can be used for the analysis of the evolution of graphene growth.