Abstract
The results of analysis of conceivable interactions between film and substrate materials during crystallization of Mg(Fe0.8Ga0.2)2O4-δ films with SiO2 and TiO2 buffer layers on silicon are reported. The calculated data are compared with the physicochemical parameters of Mg(Fe0.8Ga0.2)2O4-δ/Si, Mg(Fe0.8Ga0.2)2O4-δ/TiO2/Si, and Mg(Fe0.8Ga0.2)2O4-δ/SiO2/Si film heterostructures.
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