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Abstract
The crystallization of amorphous thin films was achieved with using a novel technology in which 13.56 MHz RF (radio frequency) plasma is applied to the film samples for few minutes without heating. The key parameter of this plasma crystallization process is the plasma gas pressure. The best plasma gas pressure depends on the plasma gas species and applied RF power and is independent to film materials and substrate materials. Easiness of plasma crystallization of ITO (Indium Tin Oxide) and TiO2 films was found to depend on the film preparation conditions and to correlate with Hall mobility. The experimental results suggest that the excitation process in crystallization on plasma treatment should be different from that on heat treatment.
Published Version
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