Crystallization of HfO2 in InAs/HfO2 core–shell nanowires

Abstract

We report the impact of deposition parameters on the structure of HfO2 covering InAs nanowires (NWs) being potential candidates for future field-effect transistors (FETs). Molecular beam epitaxial-grown Au-free InAs NWs were covered with HfO2 deposited by atomic-layer deposition. The impact of the film thickness as well as the deposition temperature on the occurrence and amount of crystalline HfO2 regions was investigated by high-resolution transmission electron microscopy (TEM) and x-ray diffraction. Compared to the deposition on planar Si substrates, the formation probability of crystalline HfO2 on InAs NWs is significantly enhanced. Here, even 3 nm thick films deposited at 250 °C are partly crystalline. Similarly, a low deposition temperature of 125 °C does not result in completely amorphous 10 nm thick HfO2 films, they contain monoclinic as well as orthorhombic HfO2 nanocrystals. Combining HfO2 and Al2O3 into a laminate structure is capable of suppressing the formation of crystalline HfO2 grains.