Abstract
The crystallization process in undoped amorphous Si 1 − x Ge x films ( x = 0.2−0.4) deposited by molecular beam processing on SiO 2 Si(100) substrates, was studied by means of X-ray diffraction and transmission electron microscopy. It was found that the amorphous SiGe decomposed via a Ge-rich phase precipitation during the crystallization at 500–900°C for 100 s to 1 h. The amount of the decomposition increased with temperature. In addition, a new modulated SiGe structure, stacked perpendicular to the 〈110〉 direction was observed.
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