Abstract
The influence of deposition conditions on the solid phase crystallisation of as-deposited amorphous Si layers obtained by low pressure chemical vapor deposition has been investigated by “in situ” isothermal annealing in a transmission electron microscope. Both nucleation and grain growth rates have been determined. Growth process was found to be linear with an activation energy of 2.4 eV. Nucleation kinetics have been calculated from both the size of the crystallites and the grain growth rates. Final grain size has been shown to depend on deposition procedure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
