Abstract
Experimental and theoretical investigations on flash lamp annealing (FLA) of amorphous silicon (a-Si) film on glass were carried out with a view to practical applications in large-window display industries. A Xe arc flash lamp of 950mm in length and 22mm in bore diameter was applied with nominal input voltage of 7kV and flash duration of 400μs. Prior to the annealing process, the specimen for FLA was preheated at 650°C, which was very close to the service temperature of the glass specimen used in this study. By employing a focusing elliptic reflector, maximum light energy density of up to 8.4J/cm2 could be attained with an active exposure width of 2cm. Crystallization of a-Si could be achieved in solid-phase by applying a flash beam with light density of at least 5J/cm2, and its phase-transition characteristics that varied with energy densities could be explained by theoretically estimated temperature fields. Electron microscopy observations confirmed that solid-phase crystallization preceded melting of a-Si due to relatively long flashing (heating) duration of 400μs, which was comparable to solid-phase crystal-growth times at elevated temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
