Abstract
Transmission electron microscopy (TEM) has been a conventional method for studying for ceramics materials, therefore, the structural change induced by electron beam is a serious subject. It is well known that some ceramics with covalent bonding are able to change to amorphous structure during the charged particle-irradiation, and also Al2O3 has three structures of alpha, amorphous and gamma. Unfortunately, we have no detailed information on the effect of charged particle irradiation on structure of ceramics. The authors have found that Al2O3 amorphous changes easily to gamma crystalline during TEM observation. The aim of this study is to clarify the effect of some factors on the crystallization process, such as accelerating voltage and irradiation temperature.Amorphous Al2O3 was prepared by 200 keV Ar+ ion implantation to 5×1016 cm−2 at 170K - room temperature (RT). High voltage and conventional TEMs of 1000 and 200 keV were used in this investigation of crystallization behavior of the amorphous which was produced on [0001] single crystal.
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