Crystallization kinetics, glass transition kinetics, and thermal stability of Se 70− xGa 30In x ( x=5, 10, 15, and 20) semiconducting glasses

Abstract

Crystallization and glass transition kinetics of Se 70− x Ga 30In x ( x=5, 10, 15, and 20) semiconducting chalcogenide glasses were studied under non-isothermal condition using a Differential Scanning Calorimeter (DSC). DSC thermograms of the samples were recorded at four different heating rates 5, 10, 15, and 20 K/min. The variation of the glass transition temperature ( T g ) with the heating rate ( β) was used to calculate the glass transition activation energy ( E t ) using two different models. Meanwhile, the variation of the peak temperature of crystallization ( T p ) with β was utilized to deduce the crystallization activation energy ( E c ) using Kissinger, Augis–Bennet, and Takhor models. Results reveal that E t decreases with increasing In content, while both T g and E c exhibit the opposite behavior, and the crystal growth occurs in one dimension. The variation of these thermal parameters with the average coordination number < Z> was also discussed, and the results were interpreted in terms of the type of bonding that In makes with Se. Assessment of thermal stability and glass forming ability (GFA) was carried out on the basis of some quantitative criteria and the results indicate that thermal stability is enhanced while the crystallization rate is reduced with the addition of In to Se–Ga glass.