Crystallization kinetics and phase evolution in amorphous SbSGe thin films

Abstract

Thin amorphous SbSGe films with compositions in the range 20–80 mol% Sb and 0–10 mol%Ge were prepared by an ion-beam-sputtering method. The effects of composition on the crystallization kinetics and phase evolution were investigated by means of differential scanning calorimetry, X-ray diffraction and transmission electron microscopy. Upon crystallization, samples with an antimony content below 40 mol% were transformed to a single phase of Sb 2S 3, while in samples with an antimony content above 40 mol% a two-phase mixture of antimony and Sb 2S 3 was developed. The addition of germanium favoured the formation of an antimony single phase. Analysis of the kinetic parameters of crystallization suggested that the short-range ordering in the amorphous phase depended on the composition of the samples.