Abstract
The structure of as-grown and annealed native oxide layers on (100) GaAs was studied using X-ray diffraction, reflection electron diffraction and microprobe analysis. The results show that crystalline β-Ga 2O 3 is present at the oxide-GaAs interface either when the oxide is grown using a current density larger than 2 mA cm -2 or when it is annealed at temperatures above about 600°C. The gallium excess with respect to arsenic is more pronouced for the oxides grown with a low current density than for the high current cases. Further, a loss of arsenic is found to occur during annealing.
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