Abstract
We report the crystallization of multilayer polycrystalline Si (poly-Si) thin films by green laser annealing with potential applications to three-dimensional devices. We investigated single-, doubleand triple-layer poly-Si thin films crystallized by GLA. The crystallinity of the green-laser-annealed (GLA) poly-Si films was improved by employing a multilayer structure; larger crystal grains were obtained at a lower power than the case of a single layer. We applied the GLA multilayer poly-Si thin films to the fabrication of thin film transistors (TFTs) and thin-film photodiodes. Through a comparison of their performance, we demonstrated the superiority of multilayer crystallization.
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