Abstract
The multi-step phase change behaviors in Ga30Sb70/GeTe (GS/GT) nanocomposite multilayer films are investigated through in situ film resistance and x-ray diffraction (XRD) measurements as well as transmission electron microscopy (TEM). Analyses of XRD and TEM indicate that the multi-step phase change in GS/GT films results from its unique crystallization mechanism (amorphous-mix crystalline–crystalline). What is more, for single period samples, the thickness of each layer has an obvious influence on multi-step transition performance. In terms of [GS(a nm)/GT(a nm)]1 film configuration, the optimized thickness of each layer should be in the range 50–100 nm. Above all, GS/GT nanocomposite thin films with one period harbor great potential for high-density phase change random access memory applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
