Abstract
We propose the novel preparation method, “Self-seeding Process”, based on the following concept for low temperature crystallization of oxide films. Introduction of desirable inhomogeneity should give lowering of a crystallization temperature through heterogeneous nucleation accompanied with reduced activation energy. We carried out inspection of the above concept through use of PZT films. PZT gel films with the desirable inhomogeneity of microstructure were prepared, and their crystallization behaviors was examined. The PZT film was successfully crystallized at 500°C by the self-seeding process. The single phase (001) oriented PZT film with 0.55 μm in thickness was obtained at 550°C for 5 min. The self-seeding process by microstructure control is efficient for the low temperature process of the oxide thin film.
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