Abstract
Thin Bi x Se 1− x layers deposited on aluminium or Kapton substrates have been characterized by means of differential thermal analysis and high temperature X-ray techniques. Some results obtained in the temperature range lying between crystallization and melting are reported; hexagonal varieties of selenium and Bi 2Se 3 phases have been observed. From phase diagram equilibrium data and with the intervention of a metastable equilibrium, a new interpretation for melting behaviour is proposed for BiSe and it may be extended to BiS thin layers.
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