Abstract
, hereafter SBN60, thin films of 300 nm thickness were deposited using ion beam sputtering technique, in which sintered ceramic target of the same composition was utilized and the gas ratio was controlled during deposition onto substrate. Crystallization and orientation behavior as well as electrical properties of the films were examined after annealing treatment at . It was found that the film orientation was dependent upon ratio, in which strong (00l) orientation was developed when the gas ratio was about 1:4 at torr. Typical remanent polarization (2Pr), the coercive field (Ec) and the dielectric constant of Pt/SBN60/Pt thin film capacitor were approximately , 60 kV/cm, and 615, respectively.
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