Abstract
The relation between the decrease in resistivity and crystal growth of an indium-tin-oxide (ITO) thin film which was prepared on a substrate at room temperature and then heated from room temperature to ∼533K in a vacuum was studied. Two steps of resistivity decrease on heat treatment at around 383K and 493K were observed. That at the lower temperature took place while keeping the amorphous state, being due to a small increase in carrier concentration and also a slight improvement of Hall mobility. The other decrease at the higher temperature is due to crystallization from the amorphous state, which gave rise to the great increase in carrier concentration.
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