Abstract
The correlation between crystallite size and carrier mobility of indium antimonide films deposited in a vacuum on glass substrates was studied. The crystallite size was determined from the X-ray diffraction profile, while the carrier mobility was deduced from a d.c. measurement of the transverse magnetoresistance effect. The data obtained from 50 specimens revealed the existence of a threshold crystallite size for a high mobility film and that the threshold value of this dimension is of the same order of magnitude as the mean free path of the electrons, i.e., 1000Å, Some effects of annealing the film on the crystallite size were also investigated.
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