Abstract
The kinetics of metal-induced-crystallisation of layered films containing amorphous Ge (a-Ge) in contact with Bi nanocrystals (NCs) have been studied by in situ transmission electron microscope annealing. The a-Ge crystallisation temperature depends strongly on NC size and shape, the former influencing the nucleation process through the metal surface area in contact with the semiconductor and the latter controlling the initial Ge crystal growth direction.
Published Version
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