Abstract
The crystallisation of amorphous Si1− x C x films (x = 1/3) produced via magnetron sputtering on silicon substrates was investigated. Grazing incidence X-ray diffractometry was used to analyse the crystalline precipitates obtained after annealing at temperatures between 1200°C and 1350°C. After annealing times of 15 h at 1200°C and 15 h at 1350°C, crystallisation of SiC is complete. The average crystallite size, d, was determined using the Scherrer equation. The rate constants for the initial growth of the crystallites were determined by straight line fits in the d − t diagrams (t being the annealing time), which obey the Arrhenius law. The activation enthalpy of 4.0 ± 0.7 eV is, within error limits, the same as that found for the growth of silicon carbide crystallites in magnetron sputtered Si1− x C x films (x = 1/2).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
