Crystallinity estimation of area-selective Ge epitaxial layer grown on Si substrate by means of high-resolution X-ray microdiffraction

Abstract

Crystallinity of area-selective Ge layer with a (0 0 1) surface grown on Si substrate has been investigated by means of diffractometry using a parallel X-ray microbeam. The measured lattice parameters of 〈0 0 1〉 direction were about 0.17% smaller than that of bulk Ge crystal. This tensile strain value was almost the same as the simulated ones that used the finite-element method.