Abstract
We investigated Ti-doped ZrO2 deposition using a cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe2)3) precursor and a titanium tetraisopropoxide (TTIP) precursor using an O3 thermal atomic layer deposition process. In addition, the effect of Ti doping concentration on the chemical bonding and electrical properties of the Ti-doped ZrO2 thin films was studied. O3 was used at a high concentration of 400 g m−3. We varied the Ti doping concentration by controlling the rate of the supercycle process in the ZrO2 process window of 200 °C–300 °C. As a result, the highest dielectric constant was observed at a Ti doping concentration of 2.5% because it enhances the crystallinity of ZrO. Excessive Ti doping hinders crystal formation.
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