Abstract
The electron cyclotron resonance plasma-enhanced chemical vapor deposition method is used to prepare ferroelectric PbTiO 3 films. Single-phase perovskite PbTiO 3 films are successfully fabricated on Pt/Ti/SiO 2/Si and Pt/SiO 2/Si substrates at temperatures of 390–530 °C using metal-organic (MO) sources. When the deposition temperature is sufficiently high (above 500 °C), lead titanate film has a stoichiometric composition independently of the MO source supply ratio. Whereas the deposition temperature is low (below 450 °C), the composition and, in turn, the structure are depended on the source supply ratio. With adequate MO source ratio, stoichiometric perovskite PbTiO 3 film can be obtained at a temperature as low as 390 °C. The variations of preferred orientation, degree of c-axis orientation and film morphology with process temperature, MO source supply ratio and substrate are also examined.
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