Abstract
Hafnium oxide (HfO 2) films were grown on SiO 2/Si and Pt/Ti/SiO 2/Si substrates by a sol–gel method, and their crystalline structure, microstructure and electrical properties were investigated. XRD analysis indicated that the monoclinic HfO 2 films can be obtained by annealing at 500 °C. A transmission electron microscopy (TEM) image showed that the films were grown as a spherulite grain structure with a mean grain size of approximately 15 nm. The dielectric constant of the HfO 2 films of 300 nm was approximately 21.6, and the current–voltage measurements showed that the leakage current density of the HfO 2 films was approximately 1.14×10 −5 A/cm 2 at an applied electric field of 100 kV/cm.
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