Abstract
AbstractIn this paper we will broadly review the promises and advantages that crystalline‐oxides‐on‐semiconductors will bring to semiconductor technology. The central issue in the epitaxial oxide semiconductor system is the role of the interface. Preparation of the semiconductor surface is essential to successful, high quality, crystalline oxide formation. Furthermore, the chemical nature of the surface then controls such fundamental properties of the system as band offsets, band bending and transport. Drawing on recent accomplishments in determining key features in the structural and electronic properties of prototype Si/(Sr,Ba)O interfaces [R. A. McKee, F. J. Walker, M. Buongiorno Nardelli, W. A. Shelton, and G. M. Stocks, Science 300, 1726 (2003)], we will then illustrate how high‐performance simulations combined with experiments have been able to characterize an interface phase whose structure‐specific chemical bonding is fundamental in determining the properties of the semiconductor/crystalline oxide system. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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