Crystalline native defects in ZnO analyzed by photoluminescence applying Maxwell-Boltzmann statistics in the visible region

Abstract

Zinc oxide (ZnO (s) ) is prepared by Chemical Bath Deposition. This manuscript continues with previous research examining the Photoluminiecence at UV-Vis-region. According to emission bands situated at Vis-region by means of Photoluminescence, green (GE) and yellow emission (YE) bands are discussed, which are associated with native intrinsic crystalline defects. The Photoluminescence dependence with the trap density and the surface recombination velocity in the light of the Maxwell-Boltzmann theoretical model (MBM) results associated with the electronic transitions related to the native intrinsic defects situated at9 Vis-region are investigated. The trap density (cm -1 ) of nanocrystals located at range ~8.9-9.9 An approximate a theoretical-experimental kinetic model is presented, considering that the coordination complex ion is a key parameter in the crystal growth of ZnO (s) nanocrystals. The optimized geometry of [Zn(NH 3 ) 4 ] 2+ molecule was obtained with the DFT method using the functional of H-GGA B3LYP.