Abstract
A new plasma process, i.e. a combination of plasma immersion ion implantation anddeposition (PIII&D) and high power impulse magnetron sputtering (HiPIMS), was developedto implant non-gaseous ions into material surfaces. The new process has the greatadvantage that thin film deposition and non-gaseous ion implantation can be achieved in asingle plasma chamber. In this study, Ge ions were successfully implanted intoSiO2 thin film, which resulted in uniformly and homogeneouslydistributed crystalline Ge quantum dots (Ge-QDs) embedded in aSiO2 matrix even without a further annealing process. Broader areas of application of PIII&Dtechnology are envisaged with this newly developed process.
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