Abstract
Glass-clad, GaSb-core fibers were drawn and subsequently laser annealed. The as-drawn fibers were found to be polycrystalline, possess Sb inclusions, and have oxide contamination concentrations of less than 3 at%. Melting and resolidifying regions in the cores using 10.6 µm CO2 laser radiation yielded single crystalline zones with enhanced photoluminescence (PL), including the first observation of strong room temperature PL from a crystalline core fiber. Annealed fibers show low values of tensile strain and a bandgap close to that of bulk GaSb.
Highlights
Crystalline semiconductor cores in glass optical fibers are of great interest
Oxidation was significant in both studies
III-V materials are of particular interest
Summary
Crystalline semiconductor cores in glass optical fibers are of great interest due to their large non-linear optical coefficients and their potential for use in devices incorporating both optical and electronic functionality. The literature on Group IV semiconductor-core glass fibers is significant [1,2,3,4,5], including processing improvements [6,7,8] and device demonstrations [9,10,11,12,13,14,15,16,17]. There are reports on both SiGe alloy and II-VI core fibers [18,19,20,21,22,23], one including low temperature photoluminescence [21]. Based on results with Group IV alloy-core fibers [7], laser annealing is a promising approach for improving the structure of III-V compound cores. We report on the structure of, and photoluminescence from, GaSb-core fibers with relatively low oxygen content, both as-drawn and after CO2 laser annealing. Post-fabrication treatment creates single crystal regions, improves purity, and increases the photoluminescence intensity
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