Abstract
Ideal nanowire interconnects for nanoelectronics will be refractory, covalently bonded, and highly conductive, irrespective of crystallographic orientation. Theoretical studies suggest that boron nanotubes should be stable and exhibit higher electrical conductivities than those of carbon nanotubes. We describe CVD growth of elemental boron nanowires, which are found to be dense nanowhiskers rather than nanotubes. Conductivity measurements establish that they are semiconducting, with electrical properties consistent with those of elemental boron. High conductivities should be achievable through doping.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
