Abstract
The crystalline boron nanowires with mean diameter around 10 nm and typical length of several microns were successfully prepared by using Si (1 0 0) as a substrate and a simple radio-frequency magnetron sputtering process under argon atmosphere with Au catalyst. Field-emission scanning electron microscopy, energy dispersive X-ray spectrometer, transmission electron microscopy, selected-area electron diffraction and electron energy-loss spectroscopy were employed to characterize the boron nanowires. The effect of preparation parameters on the crystalline boron nanowires was discussed. It was found that the nanowires grew paralleled to the substrate and with the lowest temperature 600 °C.
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