Abstract
Ga2Te3 films have been grown on GaAs(100) and (111) substrates using metalorganic chemical vapor deposition (MOCVD) at temperatures ranging from 350°C to 450°C. Very uniform films were grown at lower temperatures of 350°C on GaAs(100) substrates. As the temperature increased the roughness of the films increased, with many hillocks observed on films deposited at 450°C. The Ga2Te3 films grown on GaAs(100) were determined to be single crystal by XRD characterization. On the other hand, XRD scans confirmed crystal twinning in the Ga2Te3 films grown on GaAs(111) and the surface morphology also indicated the presence of twin grains. The films were determined to be n-type by hot-point probe testing. The carrier concentration could not be measured precisely as after photoexcitation, Ga2Te3 exhibited the persistent photoconductivity (PPC) effect.
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