Abstract
Pulsed laser deposition (PLD) with a YAG:Nd laser was used to prepare vanadium nitride thin film. Different deposition conditions of different temperatures, substrates and gas pressure were explored. The films were characterized with XRD (X-ray diffractometer), XRD pole figure, AES (Auger electron spectrometry) and RBS (Rutherford backscattering spectrometry) /Channeling. It was found that crystalline and nearly stoichiometric VN x films with an x value of 0.96 on c plane α-Al 2O 3 had been prepared by YAG:Nd laser at 450°C with the mixed gas of nitrogen and 3% hydrogen of 200 Pa. X-ray diffractometer, XRD pole figure, AES and RBS/Channeling surely confirm epitaxial and near stoichiometric growth.
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