Crystalline and Ferroelectric Properties of Pb(Zr, Ti)O3 Thin Films Grown by Low-Temperature Metalorganic Chemical Vapor Deposition

Abstract

Low-temperature growth of Pb(Zr, Ti)O3 (PZT) thin films, as low as 390°C, by metalorganic chemical vapor deposition (MOCVD) using PbTiO3 seeds was successfully achieved. Influence of the crystalline nature of PbTiO3 seeds on crystalline and ferroelectric properties of the PZT thin films were investigated. The orientation of PZT films and its degree were strongly influenced by those of PbTiO3 seeds. PZT thin films grown at 390°C showed higher orientation as the deposition temperatures of the seeds increased from 380 to 450°C. PZT thin films grown with the 380–450°C-deposited seeds showed remanent polarization (2Pr) of 6.9–15.9 µC/cm2 and coercive field (2Ec) of 93–162 kV/cm. Crystalline and ferroelectric properties of PZT films with and without seeds were also investigated.