Abstract
AbstractIndium tin oxide (ITO) semiconductive films were deposited by an atmospheric RF plasma technique. Indium-to-tin (In:Sn) ratios varied from 10:0 to 0:10. A small amount of antimony was doped into some ITO samples for comparative studies. Substrate materials were soda-lime-silicate (SLS) float glass and fused silica glass. Structural, electrical, and optical properties were dependent on the In:Sn ratio, precursor material feeding rate, oxygen feeding rate, and other deposition conditions.
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