Abstract

Binary alloy Schottky contacts on ZnO are developed using the combinatorial ion beam deposition system. The compositional fraction of the Schottky binary alloy was continuously changed by the composition spread technique. Pt–Ru alloy composition spreads were deposited as the Schottky metal alloys. It was shown that the compositional fraction of the Schottky binary alloys changed continuously. A Pt–Ru alloy metal film was grown on o-polar ZnO epitaxialy, and its crystal structures changed from the Pt-phase (cubic structure) to the Ru-phase (hexagonal structure) in the Pt–Ru alloy phase diagram. Schottky barrier heights determined by current–voltage measurements increased with increasing Pt content. By combining the ion beam deposition and combinatorial system, the Schottky barrier heights of the Schottky binary alloys have been controlled systematically.

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