Abstract
Abstract The angular width of blocking has been studied for 120 keV protons back-scattered from Si single crystal in various crystallographic directions. It was shown that for the <111> string an effective interatomic distance which determines the critical angle of channeling is larger than the mean interatomic distance. The blocking half-width dependence on the implantation dose with boron 40 keV ions and on the following annealing temperature is obtained. The results obtained are in qualitative agreement with theoretical ideas developed in the present paper. It is demonstrated that the angular half-width studies can serve as a method of crystal structure and damage investigation.
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