Abstract
A compound AgGa2Te3I belongs to the quaternary semiconductors of the general formula AІВІІІ2X3Y (AІ – Cu, Ag; ВІІІ – Ga, In; X – S, Se, Те; Y - Cl, Br, I). For the first time, its structure, which forms in tetragonal syngony, was studied by the powder method, Sp.Gr. I-4, structural type CuIn2Te3Cl, with cell parameters: a = 6,0041 (4) Å, c = 11,965 (1) Å. The compound was synthesized in evacuated quartz ampoules from simple substances and pre-synthesized AgI by step heating. Based on the melting temperatures of the components, the 1070 K maximum synthesis temperature was chosen, followed by homogenizing annealing at 770 K during 300 h and subsequent quenching in water at room temperature. As a result of the synthesis, a compact, gray alloy was obtained, which was resistant to air. The diffraction pattern of the powdered sample was taken on a DRON 4-13 diffractometer, CuKα radiation, irradiation at one point during 15 sec. WinCSD program was used to calculate the structure, which was refined by the Rietveld method. The obtained results on the structure of the compound were analyzed and its belonging to defective semiconductors was discussed.
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Schedule a callMore From: Scientific Bulletin of the Uzhhorod University. Series «Chemistry»
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