Abstract
In this paper, a hexagonal M-type barium ferrite (BaM) film with a high remanence ratio was deposited on a sapphire substrate by the pulsed laser deposition (PLD) method. The characterization results showed that the film growth at a high substrate temperature (950 °C) has a high out-of-plane orientation, good crystallinity, and smooth surface. Additionally, the hysteresis loops indicated that the film deposited at a high substrate temperature has a high remanence ratio of 0.53, which is higher than that of the other reported BaM films prepared by the PLD method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
