Abstract
The relation between the electrical properties and the microstructure of the layered-perovskite SBT thin films were studied. The crystal structure of the powder SBT samples were also analyzed by the Rietveld refinement method for clarifying the relationship between the two. The Rietveld refinement results for the Sr1Bi2Ta2O9, Sr0.7Bi2.2Ta2O9, Sr0.7Bi2Ta2O9 and (Sr0.87Bi0.13)Bi2(Ta1.93Bi0.07)O9 samples showed that excess-Bi occupies the Sr site forming (Sr1−3/2xBix)Bi2Ta2O9 solid solution. The Sr0.7Bi2Ta2O9 and (Sr0.87Bi0.13)Bi2(Ta1.93Bi0.07)O9 samples produced minor impurity phases in addition the major SBT phase. The SBT thin films with molar ratio (Sr:Bi:Ta) of 1:2:2, 0.7:2.2:2, 1.87:2.2:1.93, 1:2.2:2 and 0.7:2:2 were prepared by MOD method. The spin-coated films were crystallized at 750°C for 1 hour under O2. Remanent polarization of the thin films critically depended on the crystallinity and grain size, while the leakage current density depended on the minor impurity phase contained in the thin films. The 0.7:2.2:2 thin films showed the best electrical properties: 2Pr = 8.2 μC/cm2, Ec = 43.6KV/cm, Jleakage current = 6.4x10−8 A/cm2 at 3V.
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