Abstract
In this letter, the growth of gold-free GaSb on various InAs nanowire (NW) crystal structures using metal-organic chemical vapor deposition is demonstrated. The GaSb was grown radially and axially on wurtzite (WZ), zinc-blend (ZB) and polytype (mixture of WZ and ZB) InAs NWs. The effect of the various InAs crystal structures on GaSb was studied. This study demonstrates the control of the crystal growth of InAs and InAs/GaSb heterostructure NWs through the optimization of growth parameters and crystal transfer from core to shell, such techniques are necessary for the growth of NWs for future nanoelectronic device applications, such as TFET.
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