Abstract
X-ray diffraction and differential-thermal analysis methods were used for investigation of the component interaction in the Cu2S − Ga2S3 – In2S3 system. The existence of the quaternary phase CuGaxIn5-xS8 where 1.4 ≤ x ≤ 2.05 at 820 K was confirmed. The crystal structure of the quaternary phase was determined by X-ray powder method for the CuGa1.6In3.4S8 composition as the trigonal symmetry, S.G. P-3m, with the cell parameters a = 0.38237(3) nm, c = 3.0870(2) nm. Five vertical sections and the liquidus surface projection of the system were investigated. A single crystal CuGa1.9In3.1S8 was grown by solution-melt method, and its physical parameters such as bandgap energy and photosensitivity range were investigated.
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