Abstract
Sc 2 SiO 5 : 4 at . % Tm crystal was obtained by the Czochralski method and the crystal cell parameters were calculated. Sixfold coordinated Sc-ions occupied two different crystallographic sites but the low temperature optical spectra only represented energy transitions originating from Tm ions residing in one site. Room temperature absorption spectrum was analyzed in the framework of Judd–Ofelt theory and the calculated absorption coefficient and cross section were 10.47 cm−1 and 5.55×10−21 cm2 at 791 nm respectively. Stimulated emission cross sections for the F34–H36 transition near 1900 nm were evaluated using the reciprocity method while the luminescence F34 lifetime was measured to be 1.14 ms. We conclude that Tm:Sc2SiO5 is promising for diode-pumped infrared lasers.
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